N-Channel Power MOSFET featuring a 30V drain-source breakdown voltage and 35A continuous drain current. Offers a low 17mOhm drain-source on-resistance. Designed with a single element configuration and packaged in Tape and Reel. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 30W. Halogen-free and RoHS compliant.
PolarityN-CHANNEL
Power30W
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Technical Specifications
Onsemi ATP201-TL-H technical specifications.
General
| Continuous Drain Current (ID) | 35A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 13mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 39ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.5mm |
| Input Capacitance | 985pF |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 17mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 51ns |
| Turn-On Delay Time | 10ns |
| Width | 7.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi ATP201-TL-H Datasheet
Download the complete datasheet for Onsemi ATP201-TL-H to view detailed technical specifications.
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