P-Channel Power MOSFET featuring a 100V drain-to-source breakdown voltage and 28A continuous drain current. Offers a low 57mΩ drain-to-source resistance at VGS = -10V, VDS = -10V. Designed with a 150°C maximum operating temperature and 70W power dissipation, this single-element MOSFET is packaged in a DPAK (Single Gauge) / ATPAK surface-mount termination. Includes fast switching characteristics with a 32ns turn-on delay and 190ns fall time.
Onsemi ATP301-TL-H technical specifications.
| Continuous Drain Current (ID) | 28A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 57mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 190ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.5mm |
| Input Capacitance | 4nF |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Rds On Max | 75mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 330ns |
| Turn-On Delay Time | 32ns |
| Width | 7.3mm |
| RoHS | Compliant |
No datasheet is available for this part.
