The BAT54LT3G is a silicon rectifier diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -55 degrees Celsius. It has a maximum power dissipation of 0.2 watts and a breakdown voltage of 30 volts. The diode is packaged in a TO-236 package with three terminals and is made of silicon. It is a general purpose rectifier diode suitable for a variety of applications.
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Technical Specifications
Onsemi BAT54LT3G technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 30 |
| Breakdown Voltage-Min | 30 |
| Power Dissipation-Max | 0.2 |
Compliance
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Onsemi BAT54LT3G Datasheet
Download the complete datasheet for Onsemi BAT54LT3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.