Dual series rectifier diode, silicon, with a maximum repetitive peak reverse voltage of 100 V. Features a maximum power dissipation of 0.225 W and operates across a temperature range of -65°C to 150°C. This 3-terminal component is housed in a JEDEC TO-236 (SOT-23) package.
Quick Jump:
Technical Specifications
Onsemi BAV99LT1G technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -65 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236 |
| Pin Count | 3 |
| Number of Elements | 2 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 100 |
| Power Dissipation-Max | 0.225 |
Compliance
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.70 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Onsemi BAV99LT1G Datasheet
Download the complete datasheet for Onsemi BAV99LT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.