
NPN Bipolar Junction Transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a maximum collector-emitter voltage (VCEO) of 50V and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 200MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 350mW. Supplied in bulk packaging with 5000 units per box.
Onsemi BC182B technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 200MHz |
| Height | 5.33mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 350mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 50V |
| Weight | 0.2g |
| Width | 4.19mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC182B to view detailed technical specifications.
No datasheet is available for this part.
