NPN bipolar junction transistor (BJT) in a TO-92 package. Features a 50V collector-emitter voltage (VCEO) and 60V collector-base voltage (VCBO). Offers a maximum collector current of 100mA and a transition frequency of 150MHz. This through-hole mounted component operates from -55°C to 150°C with a minimum DC current gain (hFE) of 120. RoHS compliant with 350mW power dissipation.
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Onsemi BC182L technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 350mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 50V |
| Weight | 0.201g |
| RoHS | Compliant |
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