NPN bipolar junction transistor (BJT) in a TO-92 package, designed for small signal amplification. Features a collector-emitter breakdown voltage of 30V, a maximum collector current of 500mA, and a transition frequency of 150MHz. Offers a minimum DC current gain (hFE) of 100 and a maximum collector-emitter saturation voltage of 600mV. This RoHS compliant component is suitable for through-hole mounting and operates across a temperature range of -55°C to 150°C.
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Onsemi BC184L technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 350mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 30V |
| Weight | 0.201g |
| RoHS | Compliant |
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