NPN bipolar junction transistor designed for small signal amplification. Features a 45V collector-emitter breakdown voltage and a 100mA maximum collector current. Operates with a minimum DC current gain (hFE) of 120 and a transition frequency of 200MHz. Housed in a TO-92-3 through-hole package, this silicon transistor offers a maximum power dissipation of 350mW and an operating temperature range of -55°C to 150°C.
Frequency250MHz
PackageTO-92-3
Current Rating100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC237 technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
600mV
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Frequency
250MHz
Gain Bandwidth Product
200MHz
hFE Min
120
Lead Free
Lead Free
Max Breakdown Voltage
45V
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350mW
Mount
Through Hole
Number of Elements
1
Package Quantity
5000
Packaging
Bulk
Polarity
NPN
Power Dissipation
500mW
RoHS Compliant
No
Transition Frequency
200MHz
DC Rated Voltage
45V
Compliance
RoHS
Not Compliant
Datasheet
Onsemi BC237 Datasheet
Download the complete datasheet for Onsemi BC237 to view detailed technical specifications.
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