NPN bipolar junction transistor designed for small signal amplification. Features a 45V collector-emitter breakdown voltage and a 100mA maximum collector current. Operates with a minimum DC current gain (hFE) of 120 and a transition frequency of 200MHz. Housed in a TO-92-3 through-hole package, this silicon transistor offers a maximum power dissipation of 350mW and an operating temperature range of -55°C to 150°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi BC237 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 500mW |
| RoHS Compliant | No |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 45V |
| RoHS | Not Compliant |
| ECCN | EAR99 |
| Ushts | 8541210095 |
Download the complete datasheet for Onsemi BC237 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
