NPN bipolar junction transistor for small signal applications. Features a 45V collector-emitter breakdown voltage and 100mA maximum collector current. Operates with a 200MHz gain bandwidth product and 250MHz transition frequency. Housed in a TO-92-3 package for through-hole mounting. Offers a minimum hFE of 200 and a maximum power dissipation of 500mW.
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| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 500mW |
| RoHS Compliant | No |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 45V |
| RoHS | Not Compliant |
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Product discontinuance notice for Onsemi leaded parts transitioning to lead-free (Pb-free) alternatives. Includes last buy/ship dates and replacement part numbers.
