NPN bipolar junction transistor for small signal applications. Features a 45V collector-emitter breakdown voltage and 100mA maximum collector current. Operates with a 200MHz gain bandwidth product and 250MHz transition frequency. Housed in a TO-92-3 package for through-hole mounting. Offers a minimum hFE of 200 and a maximum power dissipation of 500mW.
Frequency250MHz
PackageTO-92-3
Current Rating100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC237B technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
600mV
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Frequency
250MHz
Gain Bandwidth Product
200MHz
hFE Min
200
Lead Free
Lead Free
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Bulk
Polarity
NPN
Power Dissipation
500mW
RoHS Compliant
No
Transition Frequency
250MHz
DC Rated Voltage
45V
Compliance
RoHS
Not Compliant
Datasheet
Onsemi BC237B Datasheet
Download the complete datasheet for Onsemi BC237B to view detailed technical specifications.
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