
NPN bipolar junction transistor (BJT) in a TO-92 package. Features a 25V collector-emitter breakdown voltage and a 100mA continuous collector current. Offers a maximum power dissipation of 500mW and a transition frequency of 250MHz. This through-hole mounted component operates from -55°C to 150°C and is RoHS compliant.
Onsemi BC239ABU technical specifications.
| Package/Case | TO-92 |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 25V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 600mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 500mW |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 25V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC239ABU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
