NPN Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 25V collector-emitter breakdown voltage (VCEO) and a maximum continuous collector current of 100mA. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 250MHz. Operates across a temperature range of -55°C to 150°C with a power dissipation of 500mW. Through-hole mounting and RoHS compliant.
Frequency250MHz
PackageTO-92-3
Current Rating100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC239CTA technical specifications.
General
Package/Case
TO-92-3
Collector Emitter Breakdown Voltage
25V
Collector Emitter Saturation Voltage
25V
Collector Emitter Voltage (VCEO)
25V
Collector-emitter Voltage-Max
600mV
Continuous Collector Current
100mA
Current Rating
100mA
Emitter Base Voltage (VEBO)
5V
Frequency
250MHz
Gain Bandwidth Product
250MHz
hFE Min
120
Lead Free
Lead Free
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Ammo Pack
Polarity
NPN
Power Dissipation
500mW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Transition Frequency
250MHz
DC Rated Voltage
25V
Compliance
RoHS
Compliant
Datasheet
Onsemi BC239CTA Datasheet
Download the complete datasheet for Onsemi BC239CTA to view detailed technical specifications.
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