NPN Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 25V collector-emitter breakdown voltage (VCEO) and a maximum continuous collector current of 100mA. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 250MHz. Operates across a temperature range of -55°C to 150°C with a power dissipation of 500mW. Through-hole mounting and RoHS compliant.
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Onsemi BC239CTA technical specifications.
| Package/Case | TO-92-3 |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 25V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 600mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 25V |
| RoHS | Compliant |
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