PNP Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 45V collector-emitter breakdown voltage and a 100mA continuous collector current. Offers a minimum hFE of 120 and a transition frequency of 130MHz. Operates across a wide temperature range from -55°C to 150°C with 500mW maximum power dissipation. Through-hole mounting and RoHS compliant.
Frequency130MHz
PackageTO-92
Current Rating-100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC307CBU technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -5V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -45V |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | -100mA |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 130MHz |
| Gain Bandwidth Product | 130MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 130MHz |
| DC Rated Voltage | -45V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC307CBU Datasheet
Download the complete datasheet for Onsemi BC307CBU to view detailed technical specifications.
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