PNP Bipolar Junction Transistor (BJT) in TO-92 package. Features a collector-emitter voltage (VCEO) of 45V and a maximum collector current of 800mA. Offers a DC rated voltage of -45V and a transition frequency of 100MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. Through-hole mount design with tin, matte contact plating. RoHS compliant.
Frequency100MHz
PackageTO-92
Current Rating-800mA
MountingThrough Hole
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Technical Specifications
Onsemi BC32740BU technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
-700mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
700mV
Contact Plating
Tin, Matte
Current Rating
-800mA
Emitter Base Voltage (VEBO)
-5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
4.58mm
hFE Min
100
Lead Free
Lead Free
Length
4.58mm
Max Breakdown Voltage
45V
Max Collector Current
800mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
PNP
Power Dissipation
625mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
-45V
Weight
0.179g
Width
3.86mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC32740BU Datasheet
Download the complete datasheet for Onsemi BC32740BU to view detailed technical specifications.
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