NPN Bipolar Junction Transistor (BJT) in a TO-92 package. Features a maximum collector current of 800mA and a collector-emitter voltage of 45V. Offers a minimum DC current gain (hFE) of 250 and a transition frequency of 210MHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. This component is lead-free and RoHS compliant, supplied in bulk packaging.
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| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | 800mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 210MHz |
| Gain Bandwidth Product | 210MHz |
| hFE Min | 250 |
| Lead Free | Lead Free |
| Max Collector Current | 800mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 210MHz |
| DC Rated Voltage | 45V |
| RoHS | Compliant |
These are design resources that include the Onsemi BC337-040G
ON Semiconductor 4Q06 product discontinuance notice for discrete, analog, logic, ECL, and power products. Last buy date is July 2, 2007; last ship date is January 2, 2008.
Official notice from ON Semiconductor detailing the discontinuance of various discrete, analog, and power products with final buy dates in late 2006.
