NPN bipolar junction transistor in a TO-92-3 package, designed for through-hole mounting. Features a maximum collector-emitter voltage (VCEO) of 20V and a continuous collector current rating of 2A. Offers a minimum DC current gain (hFE) of 85 and a transition frequency of 65MHz. Maximum power dissipation is 625mW, with operating temperatures ranging from -55°C to 150°C.
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| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 25V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 45MHz |
| Gain Bandwidth Product | 45MHz |
| hFE Min | 85 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN, PNP |
| Power Dissipation | 625mW |
| RoHS Compliant | No |
| Transition Frequency | 65MHz |
| DC Rated Voltage | 20V |
| Weight | 0.201g |
| RoHS | Not Compliant |
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Official notice from ON Semiconductor detailing the discontinuance of various discrete, analog, and power products with final buy dates in late 2006.
