PNP Bipolar Junction Transistor (BJT) in TO-92 package. Features a 20V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 1A. Offers a minimum DC current gain (hFE) of 85 and a transition frequency of 65MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. Through-hole mounting, lead-free, and RoHS compliant.
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| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 25V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -1.5A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 65MHz |
| Gain Bandwidth Product | 65MHz |
| hFE Min | 85 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Transition Frequency | 65MHz |
| DC Rated Voltage | -20V |
| Weight | 0.201g |
| RoHS | Compliant |
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