PNP Bipolar Junction Transistor (BJT) in TO-92 package. Features a 20V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 1A. Offers a minimum DC current gain (hFE) of 85 and a transition frequency of 65MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. Through-hole mounting, lead-free, and RoHS compliant.
Frequency65MHz
PackageTO-92-3
Current Rating-1.5A
MountingThrough Hole
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Technical Specifications
Onsemi BC369 technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
25V
Collector Emitter Breakdown Voltage
20V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
20V
Collector-emitter Voltage-Max
500mV
Current Rating
-1.5A
Emitter Base Voltage (VEBO)
5V
Frequency
65MHz
Gain Bandwidth Product
65MHz
hFE Min
85
Lead Free
Lead Free
Max Breakdown Voltage
20V
Max Collector Current
1A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
5000
Packaging
Bulk
Polarity
PNP
Power Dissipation
625mW
RoHS Compliant
Yes
Transition Frequency
65MHz
DC Rated Voltage
-20V
Weight
0.201g
Compliance
RoHS
Compliant
Datasheet
Onsemi BC369 Datasheet
Download the complete datasheet for Onsemi BC369 to view detailed technical specifications.
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