PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 20V collector-emitter voltage (VCEO) and a 1A maximum collector current. Offers a minimum DC current gain (hFE) of 50 and a transition frequency of 65MHz. Packaged in a TO-92-3 through-hole mount configuration, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 625mW.
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| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 25V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 65MHz |
| Gain Bandwidth Product | 65MHz |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| RoHS Compliant | Yes |
| Transition Frequency | 65MHz |
| DC Rated Voltage | -20V |
| RoHS | Compliant |
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These are design resources that include the Onsemi BC369G
Official notice from ON Semiconductor detailing the discontinuance of various discrete, analog, and power products with final buy dates in late 2006.
