
The BC546_J35Z is a TO-92 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 65V and a maximum collector current of 100mA. It operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 500mW. The transistor has a gain bandwidth product of 300MHz and a transition frequency of 300MHz.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi BC546_J35Z datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector-emitter Voltage-Max | 600mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| hFE Min | 110 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Transition Frequency | 300MHz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC546_J35Z to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
