NPN bipolar junction transistor in a TO-92-3 package, designed for through-hole mounting. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 45V. Offers a DC rated voltage of 45V, a transition frequency of 300MHz, and a minimum DC current gain (hFE) of 110. Maximum power dissipation is 500mW, with operating temperatures ranging from -65°C to 150°C.
Frequency300MHz
PackageTO-92-3
Current Rating100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC547 technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
600mV
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
hFE Min
110
Lead Free
Lead Free
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Bulk
Polarity
NPN
Power Dissipation
500mW
Reach SVHC Compliant
No
RoHS Compliant
No
Transition Frequency
300MHz
DC Rated Voltage
45V
Weight
0.2g
Compliance
RoHS
Not Compliant
Datasheet
Onsemi BC547 Datasheet
Download the complete datasheet for Onsemi BC547 to view detailed technical specifications.
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