NPN Epitaxial Silicon Transistor for through-hole mounting in a TO-92-3 package. Features a maximum collector-emitter voltage (VCEO) of 45V, a maximum collector current of 100mA, and a transition frequency of 300MHz. Offers a minimum DC current gain (hFE) of 110 and a maximum power dissipation of 500mW. Operates across a temperature range of -65°C to 150°C, with tin matte contact plating and RoHS compliance. Packaged in an ammo pack for 2000 units.
Frequency300MHz
PackageTO-92-3
Current Rating100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC547ATA technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
4.58mm
hFE Min
110
Lead Free
Lead Free
Length
4.58mm
Max Breakdown Voltage
45V
Max Collector Current
100mA
Max Frequency
1MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Ammo Pack
Polarity
NPN
Power Dissipation
500mW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
300MHz
DC Rated Voltage
45V
Weight
0.24g
Width
3.86mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC547ATA Datasheet
Download the complete datasheet for Onsemi BC547ATA to view detailed technical specifications.
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