NPN Silicon Bipolar Junction Transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a maximum collector-emitter voltage (VCEO) of 45V and a maximum collector current (IC) of 100mA. Offers a minimum DC current gain (hFE) of 110 and a transition frequency (fT) of 300MHz. Operates within a temperature range of -65°C to 150°C, with a maximum power dissipation of 500mW. Packaged on a 2000-piece tape and reel.
Frequency300MHz
PackageTO-92
Current Rating100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC547CTFR technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Tin, Matte |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 4.58mm |
| hFE Min | 110 |
| Lead Free | Lead Free |
| Length | 4.58mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 45V |
| Weight | 0.24g |
| Width | 3.86mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC547CTFR Datasheet
Download the complete datasheet for Onsemi BC547CTFR to view detailed technical specifications.
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