NPN bipolar junction transistor (BJT) in a TO-92-3 package, designed for through-hole mounting. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 30V. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 300MHz. Operates within a temperature range of -65°C to 150°C, with a maximum power dissipation of 625mW. This RoHS compliant component is supplied in bulk packaging.
PackageTO-92-3
Current Rating100mA
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi BC548C technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
250mV
Current Rating
100mA
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
300MHz
hFE Min
110
Lead Free
Lead Free
Max Breakdown Voltage
30V
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
625mW
Mount
Through Hole
Package Quantity
5000
Packaging
Bulk
Polarity
NPN
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Transition Frequency
300MHz
DC Rated Voltage
30V
Weight
0.2g
Compliance
RoHS
Not Compliant
Datasheet
Onsemi BC548C Datasheet
Download the complete datasheet for Onsemi BC548C to view detailed technical specifications.
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