NPN Bipolar Junction Transistor (BJT) in a TO-92 package, featuring a 30V collector-emitter breakdown voltage and a 100mA maximum collector current. This transistor offers a minimum DC current gain (hFE) of 100 and a transition frequency of 250MHz. It operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. The component is lead-free, RoHS compliant, and supplied in bulk packaging.
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| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Copper, Tin, Silver |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
These are design resources that include the Onsemi BC549CG
Product discontinuance notice for Onsemi TO-92 discrete components due to subcontractor focus change. Last buy date is December 31, 2014.
Official notice from ON Semiconductor detailing the discontinuance of various discrete, analog, and power products with final buy dates in late 2006.
