NPN Epitaxial Silicon Transistor, TO-92 package, featuring a 45V Collector-Emitter Voltage (VCEO) and 100mA Max Collector Current. This bipolar junction transistor offers a minimum DC current gain (hFE) of 110 and a transition frequency of 300MHz. Designed for through-hole mounting, it operates across a wide temperature range from -65°C to 150°C with a maximum power dissipation of 500mW. RoHS compliant and lead-free.
Frequency300MHz
PackageTO-92
Current Rating100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC550CBU technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Current Rating
100mA
Emitter Base Voltage (VEBO)
5V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
4.58mm
hFE Min
110
Lead Free
Lead Free
Length
4.58mm
Max Breakdown Voltage
45V
Max Collector Current
100mA
Max Frequency
1MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Mount
Through Hole
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
NPN
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
300MHz
DC Rated Voltage
45V
Weight
0.179g
Width
3.86mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC550CBU Datasheet
Download the complete datasheet for Onsemi BC550CBU to view detailed technical specifications.
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