PNP Bipolar Junction Transistor (BJT) in TO-92 package. Features a 65V collector-emitter voltage (VCEO) and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 150MHz. Operates within a temperature range of -65°C to 150°C, with a power dissipation of 500mW. Through-hole mounting and RoHS compliant.
Frequency150MHz
PackageTO-92-3
Current Rating-100mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi BC556 technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
-80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
-250mV
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
650mV
Current Rating
-100mA
Emitter Base Voltage (VEBO)
-5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
hFE Min
110
Lead Free
Lead Free
Max Collector Current
100mA
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Bulk
Polarity
PNP
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
BC556
Termination
Through Hole
Transition Frequency
150MHz
DC Rated Voltage
-65V
Weight
0.2g
Compliance
RoHS
Not CompliantNo
Datasheet
Onsemi BC556 Datasheet
Download the complete datasheet for Onsemi BC556 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
