PNP Epitaxial Silicon Transistor, TO-92 package, featuring a -80V Collector Base Voltage and 65V Collector Emitter Voltage. This bipolar junction transistor offers a maximum collector current of 100mA and a transition frequency of 150MHz. With a minimum hFE of 110 and a power dissipation of 500mW, it operates within a temperature range of -65°C to 150°C. Through-hole mounting and tin-matte contact plating are standard.
Sign in to ask questions about the Onsemi BC556ABU datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi BC556ABU technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector-emitter Voltage-Max | 650mV |
| Contact Plating | Tin, Matte |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| Height | 5.33mm |
| hFE Min | 110 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Collector Current | 100mA |
| Max Frequency | 10MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 500mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | -65V |
| Weight | 0.179g |
| Width | 4.19mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC556ABU to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
