PNP Epitaxial Silicon Transistor, TO-92 package, featuring a -80V Collector Base Voltage and 65V Collector Emitter Voltage. This bipolar junction transistor offers a maximum collector current of 100mA and a transition frequency of 150MHz. With a minimum hFE of 110 and a power dissipation of 500mW, it operates within a temperature range of -65°C to 150°C. Through-hole mounting and tin-matte contact plating are standard.
Frequency150MHz
PackageTO-92
Current Rating-100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC556ABU technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
-80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
-250mV
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
650mV
Contact Plating
Tin, Matte
Current Rating
-100mA
Emitter Base Voltage (VEBO)
-5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
5.33mm
hFE Min
110
Lead Free
Lead Free
Length
5.2mm
Max Collector Current
100mA
Max Frequency
10MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Mount
Through Hole
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
PNP
Power Dissipation
500mW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
-65V
Weight
0.179g
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC556ABU Datasheet
Download the complete datasheet for Onsemi BC556ABU to view detailed technical specifications.
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