PNP Epitaxial Silicon Transistor, 2000-FNFLD, featuring a 150MHz transition frequency and 110 minimum hFE. This through-hole component operates with a collector-emitter voltage (VCEO) of 65V and a maximum collector current of 100mA. It boasts a maximum power dissipation of 500mW and a wide operating temperature range from -65°C to 150°C. Packaged in a TO-92-3 case, this lead-free and RoHS compliant transistor is supplied in an ammo pack.
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| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector-emitter Voltage-Max | 650mV |
| Contact Plating | Tin, Matte |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| Height | 5.33mm |
| hFE Min | 110 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Breakdown Voltage | 65V |
| Max Collector Current | 100mA |
| Max Frequency | 10MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 500mW |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | -65V |
| Weight | 0.24g |
| Width | 4.19mm |
| RoHS | Compliant |
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