
PNP Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 65V collector-emitter voltage (VCEO) and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 280MHz. Designed for through-hole mounting with a maximum power dissipation of 625mW and an operating temperature range of -65°C to 150°C.
Onsemi BC556B technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector-emitter Voltage-Max | 650mV |
| Contact Plating | Tin, Matte |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 100MHz |
| Height | 5.33mm |
| hFE Min | 110 |
| Lead Free | Lead Free |
| Length | 5.2mm |
| Max Breakdown Voltage | 65V |
| Max Collector Current | 100mA |
| Max Frequency | 280MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | PNP |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Transition Frequency | 280MHz |
| DC Rated Voltage | -65V |
| Weight | 0.2g |
| Width | 4.19mm |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi BC556B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
