PNP Epitaxial Silicon Transistor, 2000-FNFLD, featuring a 65V Collector Emitter Voltage (VCEO) and 150MHz transition frequency. This bipolar junction transistor offers a minimum DC current gain (hFE) of 110 and a maximum collector current of 100mA. Packaged in a TO-92 case, it supports both through-hole and surface mount configurations and operates within a temperature range of -65°C to 150°C. RoHS compliant with tin-matte plating, it boasts a 500mW power dissipation.
Frequency150MHz
PackageTO-92
Voltage65V
Current Rating-100mA
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Technical Specifications
Onsemi BC556BTA technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
-250mV
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
650mV
Contact Plating
Tin, Matte
Current Rating
-100mA
Emitter Base Voltage (VEBO)
5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
4.58mm
hFE Min
110
Lead Free
Lead Free
Length
4.58mm
Max Breakdown Voltage
65V
Max Collector Current
100mA
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Mount
Through Hole, Surface Mount
Number of Elements
1
Package Quantity
2000
Packaging
Ammo Pack
Polarity
PNP
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
150MHz
Voltage
65V
DC Rated Voltage
-65V
Weight
0.008466oz
Width
3.86mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC556BTA Datasheet
Download the complete datasheet for Onsemi BC556BTA to view detailed technical specifications.
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