PNP Epitaxial Silicon Transistor, 2000-FNFLD, featuring a 65V Collector Emitter Voltage (VCEO) and 150MHz transition frequency. This bipolar junction transistor offers a minimum DC current gain (hFE) of 110 and a maximum collector current of 100mA. Packaged in a TO-92 case, it supports both through-hole and surface mount configurations and operates within a temperature range of -65°C to 150°C. RoHS compliant with tin-matte plating, it boasts a 500mW power dissipation.
Frequency150MHz
PackageTO-92
Voltage65V
Current Rating-100mA
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Technical Specifications
Onsemi BC556BTA technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector-emitter Voltage-Max | 650mV |
| Contact Plating | Tin, Matte |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| Height | 4.58mm |
| hFE Min | 110 |
| Lead Free | Lead Free |
| Length | 4.58mm |
| Max Breakdown Voltage | 65V |
| Max Collector Current | 100mA |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole, Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Voltage | 65V |
| DC Rated Voltage | -65V |
| Weight | 0.008466oz |
| Width | 3.86mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC556BTA Datasheet
Download the complete datasheet for Onsemi BC556BTA to view detailed technical specifications.
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