PNP Epitaxial Silicon Transistor, 2000-REEL, featuring a 65V Collector Emitter Voltage (VCEO) and -100mA Max Collector Current. This through-hole component offers a 150MHz Gain Bandwidth Product and a minimum hFE of 110. Operating across a wide temperature range from -65°C to 150°C, it boasts 500mW Max Power Dissipation and is packaged in a TO-92-3 case with tin, matte contact plating.
Frequency150MHz
PackageTO-92-3
Current Rating-100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC556BTFR technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
-80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
-250mV
Collector Emitter Voltage (VCEO)
65V
Collector-emitter Voltage-Max
650mV
Contact Plating
Tin, Matte
Current Rating
-100mA
Emitter Base Voltage (VEBO)
-5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
5.33mm
hFE Min
110
Lead Free
Lead Free
Length
5.2mm
Max Breakdown Voltage
65V
Max Collector Current
100mA
Max Frequency
10MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
500mW
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
-65V
Weight
0.24g
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC556BTFR Datasheet
Download the complete datasheet for Onsemi BC556BTFR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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