PNP Bipolar Junction Transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 45V. Offers a minimum DC current gain (hFE) of 200 and a transition frequency of 320MHz. Operates within a temperature range of -65°C to 150°C, with a maximum power dissipation of 625mW. This RoHS compliant component is supplied in bulk packaging.
Onsemi BC557B technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 650mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | PNP |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Transition Frequency | 320MHz |
| Voltage | 45V |
| DC Rated Voltage | -45V |
| Weight | 0.007055oz |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi BC557B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
