PNP Bipolar Junction Transistor (BJT) with a maximum collector current of 100mA and a collector-emitter voltage of 45V. Features a transition frequency of 150MHz, a minimum hFE of 110, and a maximum power dissipation of 500mW. Packaged in TO-92 for through-hole mounting, this RoHS compliant component operates from -65°C to 150°C and is supplied in an ammo pack.
Frequency150MHz
PackageTO-92
Current Rating-100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC557BTA technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
-50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
-250mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
650mV
Contact Plating
Tin, Matte
Current Rating
-100mA
Emitter Base Voltage (VEBO)
-5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
4.58mm
hFE Min
110
Lead Free
Lead Free
Length
4.58mm
Max Breakdown Voltage
45V
Max Collector Current
100mA
Max Frequency
150MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Ammo Pack
Polarity
PNP
Power Dissipation
500mW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
-45V
Weight
0.24g
Width
3.86mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC557BTA Datasheet
Download the complete datasheet for Onsemi BC557BTA to view detailed technical specifications.
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