PNP Bipolar Junction Transistor (BJT) with a maximum collector current of 100mA and a collector-emitter voltage of 45V. Features a transition frequency of 150MHz, a minimum hFE of 110, and a maximum power dissipation of 500mW. Packaged in TO-92 for through-hole mounting, this RoHS compliant component operates across a wide temperature range of -65°C to 150°C.
Frequency150MHz
PackageTO-92
Current Rating-100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC557BTF technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
-50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
-250mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
650mV
Contact Plating
Tin, Matte
Current Rating
-100mA
Emitter Base Voltage (VEBO)
-5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
5.33mm
hFE Min
110
Lead Free
Lead Free
Length
5.2mm
Max Breakdown Voltage
45V
Max Collector Current
100mA
Max Frequency
10MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Mount
Through Hole
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
500mW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
-45V
Weight
0.24g
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC557BTF Datasheet
Download the complete datasheet for Onsemi BC557BTF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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