PNP Bipolar Junction Transistor (BJT) in a TO-92 package. Features a maximum collector current of 100mA and a collector-emitter voltage (VCEO) of 45V. Offers a minimum DC current gain (hFE) of 420 and a transition frequency of 320MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 625mW. Compliant with RoHS standards.
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| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 650mV |
| Contact Plating | Copper, Tin, Silver |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 320MHz |
| Gain Bandwidth Product | 320MHz |
| hFE Min | 420 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Frequency | 320MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 320MHz |
| DC Rated Voltage | -45V |
| RoHS | Compliant |
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Official notice from ON Semiconductor detailing the discontinuance of various discrete, analog, and power products with final buy dates in late 2006.
