PNP Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-92 package. Features a maximum collector current of 100mA and a collector-emitter voltage of 30V. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 150MHz. Operates across a wide temperature range from -65°C to 150°C with a maximum power dissipation of 500mW. Lead-free and RoHS compliant.
Frequency150MHz
PackageTO-92-3
Current Rating-100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC558 technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
-30V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
-250mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
650mV
Current Rating
-100mA
Emitter Base Voltage (VEBO)
-5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
hFE Min
110
Lead Free
Lead Free
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Bulk
Polarity
PNP
Power Dissipation
500mW
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
-30V
Compliance
RoHS
Compliant
Datasheet
Onsemi BC558 Datasheet
Download the complete datasheet for Onsemi BC558 to view detailed technical specifications.
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