PNP Bipolar Junction Transistor (BJT) in a TO-92-3 package, designed for through-hole mounting. Features a maximum collector current of 100mA and a collector-emitter voltage of 30V. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 150MHz. Operates within a temperature range of -65°C to 150°C, with a maximum power dissipation of 500mW. This RoHS compliant component is supplied in an ammo pack.
Frequency150MHz
PackageTO-92-3
Current Rating-100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC558CTA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 650mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 110 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | -30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC558CTA Datasheet
Download the complete datasheet for Onsemi BC558CTA to view detailed technical specifications.
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