The BC559B_J35Z is a PNP transistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 100mA. It is packaged in a TO-92-3 case and is suitable for through-hole mounting. The transistor has a maximum operating temperature range of -65°C to 150°C and a maximum power dissipation of 500mW. It is not radiation hardened.
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Onsemi BC559B_J35Z technical specifications.
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 650mV |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 110 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Transition Frequency | 150MHz |
| RoHS | Compliant |
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