PNP Epitaxial Silicon Transistor, TO-92-3 package. Features a 150MHz transition frequency, 110 minimum hFE, and a maximum collector current of 100mA. Operating temperature range from -65°C to 150°C. Collector-emitter voltage (VCEO) is 30V, with a collector base voltage (VCBO) of -30V. Maximum power dissipation is 500mW.
Frequency150MHz
PackageTO-92-3
Current Rating-100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC559CTA technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
-30V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
-250mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
650mV
Contact Plating
Tin, Matte
Current Rating
-100mA
Emitter Base Voltage (VEBO)
-5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
5.33mm
hFE Min
110
Lead Free
Lead Free
Length
5.2mm
Max Breakdown Voltage
30V
Max Collector Current
100mA
Max Frequency
10MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Ammo Pack
Polarity
PNP
Power Dissipation
500mW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
-30V
Weight
0.24g
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC559CTA Datasheet
Download the complete datasheet for Onsemi BC559CTA to view detailed technical specifications.
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