PNP Bipolar Junction Transistor (BJT) in TO-92-3 package, designed for through-hole mounting. Features a maximum collector current of 100mA and a collector-emitter voltage of 45V. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 250MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 625mW. Supplied in bulk packaging with 5000 units per box.
Frequency150MHz
PackageTO-92-3
Current Rating-100mA
MountingThrough Hole
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Technical Specifications
Onsemi BC560C technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
-50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
-250mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
250mV
Current Rating
-100mA
Emitter Base Voltage (VEBO)
-5V
Frequency
150MHz
Gain Bandwidth Product
250MHz
hFE Min
110
Lead Free
Lead Free
Max Breakdown Voltage
45V
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
5000
Packaging
Bulk
Polarity
PNP
Power Dissipation
500mW
Reach SVHC Compliant
No
RoHS Compliant
No
Transition Frequency
250MHz
DC Rated Voltage
-45V
Weight
0.2g
Compliance
RoHS
Not Compliant
Datasheet
Onsemi BC560C Datasheet
Download the complete datasheet for Onsemi BC560C to view detailed technical specifications.
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