The BC635_J35Z is a TO-92 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 45V and a maximum collector current of 1A. It operates at frequencies up to 100MHz and has a maximum power dissipation of 1W. The transistor is suitable for use in a variety of applications, including general-purpose switching and amplification. It is available in bulk packaging with 2000 units per package. The BC635_J35Z has a minimum operating temperature of -65°C and a maximum operating temperature of 150°C.
Frequency100MHz
PackageTO-92
MountingThrough Hole
PolarityNPN
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Technical Specifications
Onsemi BC635_J35Z technical specifications.
General
| Package/Case | TO-92 |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 25 |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC635_J35Z Datasheet
Download the complete datasheet for Onsemi BC635_J35Z to view detailed technical specifications.
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