The BC635_J35Z is a TO-92 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 45V and a maximum collector current of 1A. It operates at frequencies up to 100MHz and has a maximum power dissipation of 1W. The transistor is suitable for use in a variety of applications, including general-purpose switching and amplification. It is available in bulk packaging with 2000 units per package. The BC635_J35Z has a minimum operating temperature of -65°C and a maximum operating temperature of 150°C.
Frequency100MHz
PackageTO-92
MountingThrough Hole
PolarityNPN
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Onsemi BC635_J35Z datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Onsemi BC635_J35Z technical specifications.
General
| Package/Case | TO-92 |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 25 |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC635_J35Z Datasheet
Download the complete datasheet for Onsemi BC635_J35Z to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
Product Images
