The BC636_J35Z is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 45V and a maximum collector current of 1A. It operates at frequencies up to 100MHz and has a gain bandwidth product of 100MHz. The transistor is packaged in a TO-92 case and is suitable for through-hole mounting. It is RoHS compliant and has a maximum power dissipation of 1W. The operating temperature range is from -65°C to 150°C.
Frequency100MHz
PackageTO-92
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi BC636_J35Z technical specifications.
General
| Package/Case | TO-92 |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 25 |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC636_J35Z Datasheet
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