The BC638G is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 500mA. It has a gain bandwidth product of 150MHz and a transition frequency of 150MHz. The transistor is packaged in a TO-92-3 case and is designed for through-hole mounting. It operates over a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-92-3
Current Rating-500mA
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi BC638G technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | -60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi BC638G Datasheet
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