
PNP Bipolar Junction Transistor (BJT) in a TO-92 package. Features a collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 1A. Offers a DC rated voltage of -80V and a transition frequency of 150MHz. Minimum DC current gain (hFE) is 25. Through-hole mounting with a maximum power dissipation of 1W.
Onsemi BC640 technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Current | 1A |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 1W |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Termination | Through Hole |
| Transition Frequency | 150MHz |
| Voltage | 80V |
| DC Rated Voltage | -80V |
| Weight | 0.00709oz |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi BC640 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
