PNP Bipolar Junction Transistor (BJT) in a TO-92 package. Features a collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 1A. Offers a DC rated voltage of -80V and a transition frequency of 150MHz. Minimum DC current gain (hFE) is 25. Through-hole mounting with a maximum power dissipation of 1W.
Frequency100MHz
PackageTO-92
Voltage80V
Current1A
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Technical Specifications
Onsemi BC640 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
-80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
500mV
Contact Plating
Tin, Matte
Current
1A
Current Rating
-1A
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
150MHz
hFE Min
25
Lead Free
Lead Free
Max Breakdown Voltage
80V
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
5000
Packaging
Bulk
Polarity
PNP
Power Dissipation
1W
Reach SVHC Compliant
No
RoHS Compliant
No
Termination
Through Hole
Transition Frequency
150MHz
Voltage
80V
DC Rated Voltage
-80V
Weight
0.00709oz
Compliance
RoHS
Not Compliant
Datasheet
Onsemi BC640 Datasheet
Download the complete datasheet for Onsemi BC640 to view detailed technical specifications.
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