
PNP Bipolar Junction Transistor (BJT) in TO-92 package. Features 80V collector-emitter breakdown voltage, 1A max collector current, and 100MHz transition frequency. Offers a minimum hFE of 40 and a max power dissipation of 1W. Designed for through-hole mounting, this lead-free and RoHS compliant component operates from -65°C to 150°C.
Onsemi BC640BU technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Current | 1A |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | BC640 |
| Transition Frequency | 100MHz |
| Voltage | 80V |
| DC Rated Voltage | -80V |
| Weight | 0.006314oz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC640BU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
