PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 45V maximum collector-emitter voltage and 0.5A maximum DC collector current. This single-element silicon transistor offers a maximum power dissipation of 300mW and a minimum DC current gain of 250 at 100mA/1V. Housed in a 3-pin SOT-23 (TO-236AA) plastic package with gull-wing leads, it operates across a temperature range of -55°C to 150°C.
PackageSOT-23
MountingSurface Mount
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Technical Specifications
Onsemi BC807-40 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
SOT-23
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
2.9
Package Width (mm)
1.3
Package Height (mm)
0.94
Seated Plane Height (mm)
1
Pin Pitch (mm)
0.95
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-236AA
Type
PNP
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
50V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
45V
Maximum DC Collector Current
0.5A
Maximum Power Dissipation
300mW
Material
Si
Minimum DC Current Gain
250@100mA@1V|40@500mA@1V
Maximum Transition Frequency
100(Min)MHz
Category
Bipolar Small Signal
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
5V1P1
EU RoHS
No
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Onsemi BC807-40 Datasheet
Download the complete datasheet for Onsemi BC807-40 to view detailed technical specifications.
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