PNP Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a collector-emitter voltage (VCEO) of -25V and a maximum collector current of 500mA. Offers a minimum DC current gain (hFE) of 160 and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 225mW. This RoHS compliant component is supplied on a 3000-piece tape and reel.
Frequency100MHz
PackageSOT-23-3
PolarityPNP
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Technical Specifications
Onsemi BC808-25LT1G technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
-30V
Collector Emitter Breakdown Voltage
25V
Collector Emitter Saturation Voltage
-700mV
Collector Emitter Voltage (VCEO)
-25V
Collector-emitter Voltage-Max
700mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
100MHz
Halogen Free
Halogen Free
Height
1.01mm
hFE Min
160
Lead Free
Lead Free
Length
3.04mm
Max Breakdown Voltage
25V
Max Collector Current
500mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
225mW
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC808-25LT1G Datasheet
Download the complete datasheet for Onsemi BC808-25LT1G to view detailed technical specifications.
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