
PNP Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a collector-emitter voltage (VCEO) of -25V and a maximum collector current of 500mA. Offers a minimum DC current gain (hFE) of 160 and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 225mW. This RoHS compliant component is supplied on a 3000-piece tape and reel.
Onsemi BC808-25LT1G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | -30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | -700mV |
| Collector Emitter Voltage (VCEO) | -25V |
| Collector-emitter Voltage-Max | 700mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| Height | 1.01mm |
| hFE Min | 160 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 500mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC808-25LT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
