The BC817-16LT1 is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 45V and a maximum collector current of 500mA. It features a gain bandwidth product of 100MHz and a maximum power dissipation of 300mW. The device is packaged in a SOT-23-3 case and is rated for operation between -55°C and 150°C. Note that this device contains lead and is not RoHS compliant.
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| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 100 |
| Lead Free | Contains Lead |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Package Quantity | 10 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | No |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 45V |
| RoHS | Not Compliant |
These are design resources that include the Onsemi BC817-16LT1
Notice of discontinuation for leaded components and their transition to lead-free (G-suffix) RoHS-compliant replacements across multiple Onsemi product lines.
