
NPN Bipolar Junction Transistor in SOT-23-3 package. Features a 45V Collector-Emitter Voltage (VCEO) and 50V Collector Base Voltage (VCBO). Offers a maximum collector current of 500mA and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C with 300mW power dissipation. This component is RoHS compliant and lead-free, supplied on a 10000-unit tape and reel.
Onsemi BC817-16LT3G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 700mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Number of Elements | 1 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC817-16LT3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
