NPN Bipolar Junction Transistor in SOT-23-3 package. Features a 45V Collector-Emitter Voltage (VCEO) and 50V Collector Base Voltage (VCBO). Offers a maximum collector current of 500mA and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C with 300mW power dissipation. This component is RoHS compliant and lead-free, supplied on a 10000-unit tape and reel.
Frequency100MHz
PackageSOT-23-3
PolarityNPN
Power300mW
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Technical Specifications
Onsemi BC817-16LT3G technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
700mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
700mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Halogen Free
Halogen Free
hFE Min
100
Lead Free
Lead Free
Max Breakdown Voltage
45V
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Number of Elements
1
Package Quantity
10000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
300mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
100MHz
Compliance
RoHS
Compliant
Datasheet
Onsemi BC817-16LT3G Datasheet
Download the complete datasheet for Onsemi BC817-16LT3G to view detailed technical specifications.
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