NPN Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a 45V collector-emitter breakdown voltage and 50V collector-base voltage. Offers a maximum collector current of 500mA and a transition frequency of 100MHz. Includes a minimum hFE of 160 and a maximum power dissipation of 300mW. This component is RoHS compliant and operates within a temperature range of -55°C to 150°C. Packaged on a 10000-piece tape and reel.
Frequency100MHz
PackageSOT-23-3
PolarityNPN
Power300mW
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Technical Specifications
Onsemi BC817-25LT3G technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
700mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
700mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Halogen Free
Halogen Free
Height
0.94mm
hFE Min
160
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
45V
Max Collector Current
500mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Number of Elements
1
Package Quantity
10000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi BC817-25LT3G Datasheet
Download the complete datasheet for Onsemi BC817-25LT3G to view detailed technical specifications.
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