
NPN bipolar junction transistor (BJT) in a SOT-23-3 package. Features a 45V collector-emitter breakdown voltage and a maximum collector current of 500mA. Offers a minimum DC current gain (hFE) of 250 and a transition frequency of 100MHz. Dissipates up to 300mW and operates across a temperature range of -55°C to 150°C. RoHS and Halogen Free compliant.
Onsemi BC817-40LT1G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 700mV |
| Contact Plating | Tin, Matte |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| Height | 0.94mm |
| hFE Min | 250 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 500mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC817-40LT1G to view detailed technical specifications.
No datasheet is available for this part.
